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Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs

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de Souza Fino, Leonardo Navarenho [Centro Universitario da Fei, Sao Paulo/Brazil] Aparecida Guazzelli da Silveira, Marcilei [Centro Universitario da Fei, Sao Paulo/Brazil] Renaux, Christian [UCL] Flandre, Denis [UCL] Gimenez, Salvador Pinillos [Centro Universitario da Fei, Sao Paulo/Brazil]

This paper describes a comparative experimental study of the influence of Total Ionizing Dose (TID), due the X-ray radiation, in the threshold voltage (VTH) of the OCTO (OSM) and Conventional SOI nMOSFET (CSM). The threshold voltage becomes more negative at high X-ray doses in both devices. The impact of trapped charge in the buried oxide becomes more evident on the conventional device, while the octagonal device exhibits a lower change of the threshold values than the conventional, considering the same gate die area (Ag) and bias conditions.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2013
Language Anglais
Conference "VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013)", Campinas (Brazil) (du 02/05/2013 au 03/05/2013)
Peer reviewed yes
Host document
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords SOI ; nMOSFETs ; X-Ray radiation ; OCTO SOI MOSEFTs ; Conventional SOI MOSFETs
Links
Bibliographic reference de Souza Fino, Leonardo Navarenho ; Aparecida Guazzelli da Silveira, Marcilei ; Renaux, Christian ; Flandre, Denis ; Gimenez, Salvador Pinillos. Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs.VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013) (Campinas (Brazil), du 02/05/2013 au 03/05/2013).
Permanent URL http://hdl.handle.net/2078.1/157798