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28 nm FD SOI Technology Platform RF FoM

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Kazemi Esfeh, Babak [UCL] Kilchytska, Valeriya [UCL] Barral, V. [CEA-Leti, Grenoble/France] Planes, N. [ST-Microelectronics, Crolles/France] Haond, M. [ST-Microelectronics, Crolles/France] Flandre, Denis [UCL] Raskin, Jean-Pierre [UCL]

This work provides a detailed study of 28 nm fully depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2014
Language Anglais
Conference "2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2014)", Millbrae (USA) (du 06/10/2014 au 09/10/2014)
Peer reviewed yes
Host document "Proceedings of the 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference"
Publisher IEEE
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords FD-SOI MOSFET ; UTBB ; RF figures of merit
Links
Bibliographic reference Kazemi Esfeh, Babak ; Kilchytska, Valeriya ; Barral, V. ; Planes, N. ; Haond, M. ; et. al. 28 nm FD SOI Technology Platform RF FoM.2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2014) (Millbrae (USA), du 06/10/2014 au 09/10/2014). In: Proceedings of the 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE2014
Permanent URL http://hdl.handle.net/2078.1/157251