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Total-Dose Effects Caused by High-Energy Neutrons and y-Rays in Multiple-Gate FETs

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Kilchytska, Valeriya [UCL] Alvarado Pulido, José Joaquin [UCL] Collaert, N. [IMEC, Leuven/Belgique] Rooyakers, R. [IMEC, Leuven/Belgique] Militaru, Otilia [UCL] Berger, G. [UCL] Flandre, Denis [UCL]

This work investigates the effects of high-energy neutrons and -rays on multiple-gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by -rays and high-energy neutrons with similar doses are largely similar. It is revealed that, on the contrary to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2014
Language Anglais
Journal information "IEEE Transactions on Nuclear Science" - Vol. 57, no.4, p. 1764-1770 (08/2010)
Peer reviewed yes
Publisher I E E E
issn 0018-9499
e-issn 1558-1578
Publication status Publié
Affiliations UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
UCL - SST/CRC - Centre de ressources du cyclotron
Keywords y-irradiation ; FinFETs ; High-energy neutrons ; Interface traps
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Bibliographic reference Kilchytska, Valeriya ; Alvarado Pulido, José Joaquin ; Collaert, N. ; Rooyakers, R. ; Militaru, Otilia ; et. al. Total-Dose Effects Caused by High-Energy Neutrons and y-Rays in Multiple-Gate FETs. In: IEEE Transactions on Nuclear Science, Vol. 57, no.4, p. 1764-1770 (08/2010)
Permanent URL http://hdl.handle.net/2078.1/157249