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Effect of High Temperature on Analog Parameters of Asymmetric Self-Cascode SOI nMOSFETs

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d'Oliveira, Ligia M. [Centro Universitario da FEI, Brazil] Flandre, Denis [UCL] Pavanello, Marcelo Antonio [Centro Universitario da FEI, Brazil] de Souza, Michelly [Centro Universitario da FEI, Brazil]

This paper presents an analysis on the high temperature operation of Silicon-on-Insulator (SOl) nMOSFETs in Asymmetric Self-Cascode (A-SC) configuration. For this analysis, experimental results in the range of 300K to 500K of ASC structures with different channel lengths for both the drain side transistor (MD) and source side transistor (MS) are used. The effect of varying channel length under high temperatures on the A-SC association is evaluated using as figure of merit important analog parameters, such as the intrinsic voltage gain and transconductance over drain current ratio.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2014
Language Anglais
Conference "29th Symposium on Microelectronics Technology and Devices (SBMicro 2014)", Aracaju (Brazil) (du 01/09/2014 au 05/09/2014)
Peer reviewed yes
Host document
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Analog parameters ; Asymmetric self-cascode ; high temperatures ; SOl nMOSFET
Links
Bibliographic reference d'Oliveira, Ligia M. ; Flandre, Denis ; Pavanello, Marcelo Antonio ; de Souza, Michelly. Effect of High Temperature on Analog Parameters of Asymmetric Self-Cascode SOI nMOSFETs.29th Symposium on Microelectronics Technology and Devices (SBMicro 2014) (Aracaju (Brazil), du 01/09/2014 au 05/09/2014).
Permanent URL http://hdl.handle.net/2078.1/152093