Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi2-x fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.
Yarekha, Dmytro A. ; Larrieu, Guilhem ; Nreil, Nicolas ; Dubois, Emmanuel ; Godey, S. ; et. al. UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET.Meeting of the Electrochemical Society 2009 (San Francisco (USA), du 24/05/2009 au 29/05/2009).