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Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

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Larrieu, Guilhem [IEMN, Villeneuve d'Ascq] Yarekha, Dmytro A. [ISEN, Lille] Dubois, Emmanuel [IEMN, Villeneuve d'Ascq] Breil, Nicolas [IEMN, Villeneuve d'Ascq] Reckinger, Nicolas [UCL] Tang, Xiaohui [UCL] Halimaoui, Aomar [ST-Microelectronics, Crolles]

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2009
Language Anglais
Conference "Meeting of the Electrochemical Society 2009", San Francisco (USA) (du 24/05/2009 au 29/05/2009)
Peer reviewed yes
Host document
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords FD SOI ; MOSFET ; nMOSFET ; Schottky barrier
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Bibliographic reference Larrieu, Guilhem ; Yarekha, Dmytro A. ; Dubois, Emmanuel ; Breil, Nicolas ; Reckinger, Nicolas ; et. al. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs.Meeting of the Electrochemical Society 2009 (San Francisco (USA), du 24/05/2009 au 29/05/2009).
Permanent URL http://hdl.handle.net/2078.1/135228