Krzeminski, A.
[IEMN, France]
Dubois, Emmanuel
[IEMN, France]
Tang, Xiaohui
[UCL]
Reckinger, Nicolas
[UCL]
Crahay, André
[UCL]
Bayot, Vincent
[UCL]
Process simulations are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimize it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.
Bibliographic reference |
Krzeminski, A. ; Dubois, Emmanuel ; Tang, Xiaohui ; Reckinger, Nicolas ; Crahay, André ; et. al. Optimisation and simulation of an alternative nano-flash memory: the SASEM device.MRS Fall Meeting 2004 (Boston (USA), du 28/11/2004 au 02/12/2004). In: Proceedings of the MRS Fall Meeting 2004, 2004, p. 6 |
Permanent URL |
http://hdl.handle.net/2078.1/135124 |