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Optimisation and simulation of an alternative nano-flash memory: the SASEM device

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Krzeminski, A. [IEMN, France] Dubois, Emmanuel [IEMN, France] Tang, Xiaohui [UCL] Reckinger, Nicolas [UCL] Crahay, André [UCL] Bayot, Vincent [UCL]

Process simulations are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimize it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2004
Language Anglais
Conference "MRS Fall Meeting 2004", Boston (USA) (du 28/11/2004 au 02/12/2004)
Peer reviewed yes
Host document "Proceedings of the MRS Fall Meeting 2004"- p. 6
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Nano-flash memories
Links
Bibliographic reference Krzeminski, A. ; Dubois, Emmanuel ; Tang, Xiaohui ; Reckinger, Nicolas ; Crahay, André ; et. al. Optimisation and simulation of an alternative nano-flash memory: the SASEM device.MRS Fall Meeting 2004 (Boston (USA), du 28/11/2004 au 02/12/2004). In: Proceedings of the MRS Fall Meeting 2004, 2004, p. 6
Permanent URL http://hdl.handle.net/2078.1/135124