User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunneling and temperature

Primary tabs

Pascual, E. [Universidad de Salamanca] Rengel, R. [Universidad de Salamanca] Reckinger, Nicolas [UCL] Tang, Xiaohui [UCL] Bayot, Vincent [UCL] Martin, M.J. [Universidad de Salamanca]

In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2007
Language Anglais
Conference "15th International Conference on Nanoequilibrium Carrier Dynamics in Semiconductors (HCTS-15)", Tokyo (Japan) (2007)
Peer reviewed yes
Host document "Physica status solidi"- p. 119-122
Publisher Wiley (Weinheim)
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
  1. Larson, IEEE Trans. Electron Dev., 53, 1048 (2006)
  2. M. Sugino, L. A. Akers, and M. E. Rebeschini, IEDM Tech. Dig. 462 (1982)
  3. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).
  4. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, 1989).
  5. Dubois, J. Appl. Phys., 96, 729 (2004)
  6. Martín, J. Appl. Phys., 79, 7975 (1997)
  7. B. H. Bransden and C. J. Joachain, Introduction to Quantum Mechanics (Longman, 1986).
  8. Rengel, IEEE Electron Device Lett., 28, 171 (2007)
  9. Martín, Semicond. Sci. Technol., 11, 380 (1996)
Bibliographic reference Pascual, E. ; Rengel, R. ; Reckinger, Nicolas ; Tang, Xiaohui ; Bayot, Vincent ; et. al. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunneling and temperature.15th International Conference on Nanoequilibrium Carrier Dynamics in Semiconductors (HCTS-15) (Tokyo (Japan), 2007). In: Physica status solidi, Wiley : Weinheim2007, p. 119-122
Permanent URL http://hdl.handle.net/2078.1/135096