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RF Plasma Annealing of Positive Charge Created by Fowler-Nordheim Electron Injection in the Buried Oxide of SIMOX SOI structures

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Kilchytska, Valeriya [National Academy of Sciences of Ukraine] Nazarov, Alexei [National Academy of Sciences of Ukraine] Barchuk, I. [National Academy of Sciences of Ukraine] Tkachenko, A. [National Academy of Sciences of Ukraine] Ashok, D. [National Academy of Sciences of Ukraine] Ballutaud, D. [National Academy of Sciences of Ukraine]

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Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2000
Language Anglais
Conference "NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices"", Kiev (Ukraine) (du 15/10/2000 au 20/10/2000)
Peer reviewed yes
Host document "Proceedings of the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices""
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords SOI ; SIMOX SOI structures
Links
Bibliographic reference Kilchytska, Valeriya ; Nazarov, Alexei ; Barchuk, I. ; Tkachenko, A. ; Ashok, D. ; et. al. RF Plasma Annealing of Positive Charge Created by Fowler-Nordheim Electron Injection in the Buried Oxide of SIMOX SOI structures.NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" (Kiev (Ukraine), du 15/10/2000 au 20/10/2000). In: Proceedings of the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", 2000
Permanent URL http://hdl.handle.net/2078.1/132826