User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs

Bibliographic reference Alvarado Pulido, José Joaquin ; Kilchytska, Valeriya ; Boufouss, El Hafed ; Flandre, Denis. Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs.21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010) (Gaeta, du 11/10/2010 au 15/10/10). In: Proceedings of the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), 2010
Permanent URL http://hdl.handle.net/2078.1/129902