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Partial Sn-atom ordering in Sm3Ga0.80-2.48Sn 4.20-2.52

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Tokaychuk, Y.O. Filinchuk, Yaroslav [UCL] Fedorchuk, A.O. Bodak, O.I.

The structure of an Sm3Ga5-xSnx compound that crystallizes with the Pu3Pd5 structure across a wide compositional range was presented. The evolution of the structure as a function of the Ga content was also studied by X-ray powder diffraction on ten Sm 3Ga5-xSnx samples. The extraction of a single crystal of Sm3Ga1.89Sn3.11 from an arc-melted Sm40Ga20Sn40 ingot annealed at 870 for one month was also discussed. It was shown that the 8g position remains occupied essentially exclusively by Sn atoms within the whole homogeneity range, with x ranging from 2.52 to 4.20.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2003
Language Anglais
Journal information "Acta crystallographica. Section C , Crystal structure communications" - Vol. 59, no. 12, p. i125-i127 (2003)
Peer reviewed yes
Publisher Wiley-Blackwell Munksgaard ((Denmark) [S.l.])
issn 0108-2701
e-issn 1600-5759
Publication status Publié
Affiliations University of Geneva (Switzerland) - Crystallography
UCL - Autre
Keywords Crystal structure ; Cell parameters ; Structural parameters ; Samarium compounds ; Crystallization ; Intermetallics ; Mixtures ; Plutonium compounds ; Single crystals ; Statistical methods ; Tin ; X ray powder diffraction
Links
Bibliographic reference Tokaychuk, Y.O. ; Filinchuk, Yaroslav ; Fedorchuk, A.O. ; Bodak, O.I.. Partial Sn-atom ordering in Sm3Ga0.80-2.48Sn 4.20-2.52. In: Acta crystallographica. Section C , Crystal structure communications, Vol. 59, no. 12, p. i125-i127 (2003)
Permanent URL http://hdl.handle.net/2078/126786