Schottky-barrier source/drain (S/D) MOSFETs (SB-MOS) have recently demonstrated leading edge high frequency (HF) performance, featuring a 280 GHz current gain cut-off frequency fT at 30 nm of gate length. Although this figure represents the best ever recorded fT for a p-MOSFET, little effort has been produced, so far, to analyze key small signal elements (SSE) such as the transconductance G m and the total input capacitance Cgg that directly impact fT. This work demonstrates that the loss of transconductance related to the Schottky barrier (SB) is counterbalanced by a reduction of the total gate capacitance.
Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date
2007
Language
Anglais
Conference
"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems", Long Beach, CA, U2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF SystemsSA (du 10/01/2007 au 12/01/2007)
Peer reviewed
yes
Host document
"Proceedings of the 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems"- pp. 32-35 (ISBN : 0-7803-9765-7)
Valentin, R. ; Dubois, E. ; Raskin, Jean-Pierre ; Dambrine, G. ; Larrieu, G. ; et. al. Investigation of high frequency performances for Schottky-Barrier p-MOSFET.2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (Long Beach, CA, U2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF SystemsSA, du 10/01/2007 au 12/01/2007). In: Proceedings of the 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2007, p.pp. 32-35
