Raskin, Jean-Pierre
[UCL]
A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pre-etched cavities is presented. In this context, wafer bonding parameters are analyzed. The effects of surface activation and annealing conditions are qualified, quantified and a viable solution is proposed.
Bibliographic reference |
Raskin, Jean-Pierre. Thin film transfer for the fabrication of multiple gate MOS transistors.9th International Symposium on Semiconductor Wafer Bonding, Science, Technology and Application - Electrochemical Society Fall Meeting (Cancum, Mexico, du 29/10/2006 au 03/11/2006). In: Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding, Science, Technology and Application - Electrochemical Society Fall Meeting, 2006, p. Paper 1369 |
Permanent URL |
http://hdl.handle.net/2078.1/123273 |