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Variable Barrier Resonant Tunneling Transistor: A New Path Towards Steep Slope and High On-Current?

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Afzalian, Aryan [Tyndall National Institute, University of Cork] Colinge, Jean-Pierre [Tyndall National Institute, University of Cork] Flandre, Denis [UCL]

A new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling Transistor, is presented and modeled using 3D Non-Equilibrium Green Function simulations. Owing to the presence of variable tunnel barrier(s) designed to be at the onset of resonant tunneling regime, we predict steep subthreshold slope as steep as 45mV/dec, together with high on-current and high Ion/Ioff current ratios in Si nanowire transistors.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2010
Language Anglais
Conference "2010 EUROSOI Conference", Grenoble (France) (du 25/01/2010 au 27/01/2010)
Peer reviewed yes
Host document "Proceedings of the 2010 EUROSOI Conference"- p. 109-110
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Transistor ; MOSFET ; Variable resonant tunneling transistor
Links
Bibliographic reference Afzalian, Aryan ; Colinge, Jean-Pierre ; Flandre, Denis. Variable Barrier Resonant Tunneling Transistor: A New Path Towards Steep Slope and High On-Current?.2010 EUROSOI Conference (Grenoble (France), du 25/01/2010 au 27/01/2010). In: Proceedings of the 2010 EUROSOI Conference, 2010, p. 109-110
Permanent URL http://hdl.handle.net/2078.1/122810