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Synthetic microwave inductors in SOI technology

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Raskin, Jean-Pierre [UCL] Eggermont, J.-P. [UCL] Vanhoenacker-Janvier, Danielle [UCL] Colinge, Jean-Pierre [UCL]

One of the most promising approaches in the field of active filtering has been the replacement of conventional passive resonators with active resonators that are based on high frequency inductance-simulating-circuits. For the first time the possibilities to realize synthetic inductors in SOI MOSFET technology is demonstrated. Compared to the conventional spiral inductors the active inductors have attractive features; lossless characteristic, operation over a wide microwave range, size independent of the inductance value, and easy construction in MMICs. All these advantages are important in the GHz frequency range where many of the wireless communication applications operate.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 1997
Language Anglais
Conference "1997 IEEE International SOI Conference", Fish Camp, California, USA (du 06/10/1997 au 09/10/1997)
Peer reviewed yes
Host document "Proceedings of the 1997 IEEE International SOI Conference"- pp. 90-91 (ISBN : 0-7803-3938-X)
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
Bibliographic reference Raskin, Jean-Pierre ; Eggermont, J.-P. ; Vanhoenacker-Janvier, Danielle ; Colinge, Jean-Pierre. Synthetic microwave inductors in SOI technology.1997 IEEE International SOI Conference (Fish Camp, California, USA, du 06/10/1997 au 09/10/1997). In: Proceedings of the 1997 IEEE International SOI Conference, 1997, p.pp. 90-91
Permanent URL http://hdl.handle.net/2078.1/122287