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Variable-Barrier Tunneling SOI Transistor (VBT)

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Afzalian, Aryan [UCL] Dehdashti, Nima [Tyndall National Institute, University of Cork] Ferain, Isabelle [Tyndall National Institute, University of Cork] Lee, Chi-Woo [Tyndall National Institute, University of Cork] Yan, Ran [Tyndall National Institute, University of Cork] Colinge, Jean-Pierre [Tyndall National Institute, University of Cork]

In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300K. The VBT reported here breaks the 60mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2009
Language Anglais
Conference "2009 IEEE International SOI Conference", Foster City (USA) (du 04/10/2009 au 07/10/2009)
Peer reviewed yes
Host document "Proceedings of the 2009 IEEE International SOI Conference"- p. 2 pages
Publisher IEEE
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords SOI transistors ; Variable-Barrier Tunneling (VBT)
Links
Bibliographic reference Afzalian, Aryan ; Dehdashti, Nima ; Ferain, Isabelle ; Lee, Chi-Woo ; Yan, Ran ; et. al. Variable-Barrier Tunneling SOI Transistor (VBT).2009 IEEE International SOI Conference (Foster City (USA), du 04/10/2009 au 07/10/2009). In: Proceedings of the 2009 IEEE International SOI Conference, IEEE2009, p. 2 pages
Permanent URL http://hdl.handle.net/2078.1/122221