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Gate length scaling and microwave performance of double gate nanotransistors

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Kranti, Abhinav [UCL] Chung, Tsung Ming [UCL] Raskin, Jean-Pierre [UCL]

A detailed analysis of static and dynamic characteristics of deep submicron double and single gate SOI MOSFETs is presented, based on 2D numerical simulations for high frequency analog applications. Results show that although DG MOSFET offers excellent performance with respect to short channel immunity and higher transconductance, it offers nearly two times the value of gate-to-source capacitance as compared to SG devices, thus limiting the cut-off frequency at higher gate voltages. At ultra short channel lengths and low gate overdrive voltages, DG devices show a significant improvement in cut-off frequency compared to SG devices, thus presenting DG nanotransistors as potential candidates for analog microwave applications.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2005
Language Anglais
Journal information "International Journal of Nanoscience" - Vol. 4, no.5-6, pp. 1021-1024 (October-December 2005)
Peer reviewed yes
Publisher World Scientific Publishing Co. Pte. Ltd. ((Singapore) Singapore)
issn 0219-581X
e-issn 1793-5350
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
  1. Colinge Jean-Pierre, Silicon-on-Insulator Technology, ISBN:9781475721232, 10.1007/978-1-4757-2121-8
  2. Dambrine G., Raynaud C., Lederer D., Dehan M., Rozeaux O., Vanmackelberg M., Danneville F., Lepilliet S., Raskin J.-P., What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?, 10.1109/led.2003.809525
  3. Lin R., IEEE Electron. Dev. Lett., 24, 49
Bibliographic reference Kranti, Abhinav ; Chung, Tsung Ming ; Raskin, Jean-Pierre. Gate length scaling and microwave performance of double gate nanotransistors. In: International Journal of Nanoscience, Vol. 4, no.5-6, pp. 1021-1024 (October-December 2005)
Permanent URL http://hdl.handle.net/2078/121821