Afzalian, Aryan
[UCL]
Lee, Chi-Woo
[Tyndall National Institute, University of Cork]
Yan, Ran
[Tyndall National Institute, University of Cork]
Dehdashti, Nima
[Tyndall National Institute, University of Cork]
Colinge, Cindy
[Tyndall National Institute, University of Cork]
Colinge, Jean-Pierre
[Tyndall National Institute, University of Cork]
In this paper, we investigate the effect of cross-section variations in nanowire MUGFETs through 3D quantum simulations based on Non-Equilibrium Green’s Function (NEGF) formalism. We show that the effect of cross-section variations in a nanowire results in energy barriers in the conduction band that can be interpreted as a local increase of the bandgap. In narrow nanowires with a cross section of a few nanometers, this can strongly influence the current and the characteristics of the device. A small constriction resulting in a barrier of the order of a 0.1eV is shown to be an effective way to create a tunnel barrier that can be used to improve the on/off current ratio in ultra-scaled transistors.
| Bibliographic reference |
Afzalian, Aryan ; Lee, Chi-Woo ; Yan, Ran ; Dehdashti, Nima ; Colinge, Cindy ; et. al. Three-Dimensional NEGF Simulations of constriction tunnel barrier Silicon Nanowire MUGFETs.215th ECS Meeting (San Francisco (USA), du 24/05/2009 au 29/05/2009). In: ECS Transactions, Vol. 19, no.4, p. 229-234 (2009)In: ECS Transactions, Electrochemical Society, Inc.2009, p.229-234 |
| Permanent URL |
http://hdl.handle.net/2078.1/121024 |
