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Junctionless MuGFETS

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Lee, Chi-Woo [Tyndall National Institute, University of Cork] Afzalian, Aryan [UCL] Yan, Ran [Tyndall National Institute, University of Cork] Dehdashti, Nima [Tyndall National Institute, University of Cork] Colinge, Jean-Pierre [Tyndall National Institute, University of Cork]

This paper describes the simulation of the electrical characteristics of a new transistor concept called “Junctionless MuGFET”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical property than classical inversion-mode devices with S&D PN junctions.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2009
Language Anglais
Conference "5th EuroSOI Workshop 2009", Göteborg (Sweden) (du 19/01/2009 au 21/01/2009)
Peer reviewed yes
Host document "Proceedings of the 5th EuroSOI Workshop 2009"- p. 2 pages
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords MuGFETs ; Inversion-mode
Links
Bibliographic reference Lee, Chi-Woo ; Afzalian, Aryan ; Yan, Ran ; Dehdashti, Nima ; Colinge, Jean-Pierre. Junctionless MuGFETS.5th EuroSOI Workshop 2009 (Göteborg (Sweden), du 19/01/2009 au 21/01/2009). In: Proceedings of the 5th EuroSOI Workshop 2009, 2009, p. 2 pages
Permanent URL http://hdl.handle.net/2078.1/121020