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Design and characterization of ultra-low-power SOI-CMOS IC temperature level detector
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Document type | Article de périodique (Journal article) – Article de recherche |
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Access type | Accès restreint |
Publication date | 2012 |
Language | Anglais |
Journal information | "Electronics Letters" - Vol. 48, no. 14, p. 842-844 (5 July 2012) |
Peer reviewed | yes |
Publisher | The Institution of Engineering and Technology ((United Kingdom) [Stevenage, etc.,) |
issn | 0013-5194 |
e-issn | 1350-911X |
Publication status | Publié |
Affiliations |
University of Technology of Petronas
- Department of Electrical and Electronic Engineering, Ipoh UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
Keywords | TLD ; Temperature level detector ; SOI ; silicon-on-insulator (SOI) technology ; CMOS |
Links |
Bibliographic reference | Assaad, Maher ; Boufouss, El Hafed ; Gérard, Pierre ; Francis, Laurent ; Flandre, Denis. Design and characterization of ultra-low-power SOI-CMOS IC temperature level detector. In: Electronics Letters, Vol. 48, no. 14, p. 842-844 (5 July 2012) |
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Permanent URL | http://hdl.handle.net/2078.1/112761 |