hBN-assisted dry transfer of CVD graphene

Graphene, this two-dimensional network composed of carbon arranged in hexagons, attracts more and more interests since the highlight of its incredible properties in 2004 by the group of Novoselov and Geim. Indeed, graphene has shown outstanding thermal and electronic conductivity and great mechanical resistance. This electronic conductivity promises the utilization of graphene in a wide range of applications in nanoscale devices like transistors, Li-ion batteries, supercapacitors, solar cells, etc. Nevertheless, the integration of graphene in an electronic device requires to place it on an insulator substrate. This work proposes a method to transfer graphene grown by chemical vapor deposition on a copper substrate with the assistance of hexagonal Boron Nitride (hBN). This document analyzes the importance of several parameters (temperature and mechanical pressure during transfer, distance between graphene and hBN flakes at contact, etc.) that influence the smooth functioning of this dry transfer technique